U N E P - définition. Qu'est-ce que U N E P
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Qu'est-ce (qui) est U N E P - définition

H.U.N.E; H U N E; H. U. N. E.; HUNE

P. U. Shanmugam         
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INDIAN POLITICIAN
P. U. Shanmugham
P U Shanmugam, affectionately called as Paa Vuu Saa (15 August 1924 - 11 April 2007) was an Indian politician and former minister of Tamil Nadu for Internal affairs, former minister of Public works, former minister of public health and various other portfolios on various tenures. The Dravidian veteran also worked as the Organisation Secretary of DMK and the General secretary of AIADMK.
https://en.wikipedia.org/wiki/P._U._Shanmugam
P–n junction         
  • A silicon p–n junction in reverse bias.
  • PN junction operation in forward-bias mode, showing reducing depletion width.
  • '''Figure B.''' A p–n junction in thermal equilibrium with zero-bias voltage applied. Under the junction, plots for the charge density, the electric field, and the voltage are reported. (The log concentration curves should actually be smoother, like the voltage.)
  • '''Figure A.''' A p–n junction in thermal equilibrium with zero-bias voltage applied. Electron and hole concentration are reported with blue and red lines, respectively. Gray regions are charge-neutral. Light-red zone is positively charged. Light-blue zone is negatively charged. The electric field is shown on the bottom, the electrostatic force on electrons and holes and the direction in which the diffusion tends to move electrons and holes. (The log concentration curves should actually be smoother with slope varying with field strength.)
  • [[Silicon]] atoms (Si) enlarged about 45,000,000x.
SEMICONDUCTOR–SEMICONDUCTOR JUNCTION, FORMED AT THE BOUNDARY BETWEEN A P-TYPE AND N-TYPE SEMICONDUCTOR
P-N junction; Reverse bias; Reverse-biased; Idiot Diode; P–N junction; PN junction; Pn junction; Pn-junction; Single-junction cell; P-n; Semiconductor junction; Pn Junction; Formation of a p-n Junction; P-n junction
A p–n junction is a boundary or interface between two types of semiconductor materials, p-type and n-type, inside a single crystal of semiconductor. The "p" (positive) side contains an excess of holes, while the "n" (negative) side contains an excess of electrons in the outer shells of the electrically neutral atoms there.
https://en.wikipedia.org/wiki/P–n_junction
p-n junction         
  • A silicon p–n junction in reverse bias.
  • PN junction operation in forward-bias mode, showing reducing depletion width.
  • '''Figure B.''' A p–n junction in thermal equilibrium with zero-bias voltage applied. Under the junction, plots for the charge density, the electric field, and the voltage are reported. (The log concentration curves should actually be smoother, like the voltage.)
  • '''Figure A.''' A p–n junction in thermal equilibrium with zero-bias voltage applied. Electron and hole concentration are reported with blue and red lines, respectively. Gray regions are charge-neutral. Light-red zone is positively charged. Light-blue zone is negatively charged. The electric field is shown on the bottom, the electrostatic force on electrons and holes and the direction in which the diffusion tends to move electrons and holes. (The log concentration curves should actually be smoother with slope varying with field strength.)
  • [[Silicon]] atoms (Si) enlarged about 45,000,000x.
SEMICONDUCTOR–SEMICONDUCTOR JUNCTION, FORMED AT THE BOUNDARY BETWEEN A P-TYPE AND N-TYPE SEMICONDUCTOR
P-N junction; Reverse bias; Reverse-biased; Idiot Diode; P–N junction; PN junction; Pn junction; Pn-junction; Single-junction cell; P-n; Semiconductor junction; Pn Junction; Formation of a p-n Junction; P-n junction
¦ noun Electronics a boundary between p-type and n-type material in a semiconductor device, functioning as a rectifier.

Wikipédia

H.U.N.E.

In 2003, the National Corporation for Antiquities and Museums (NCAM) of the Republic of Sudan launched an international appeal for rescuing the archaeological sites which are going to be inundated by the floods of the Hamdab High Dam currently under construction near Merowe in the Fourth Cataract region of northern Sudan. The new reservoir will cover about 170 km of the Nile valley, and its completion is scheduled for 2007.
H.U.N.E., the Humboldt University Nubian Expedition is one of a group of international expeditions which followed this appeal and joined the Merowe Dam Archaeological Salvage Project (MDASP). H.U.N.E. is based at the Institute of Northeast African Archaeology and Cultural Studies at the Humboldt University of Berlin, Germany. Its main aim is the complete recording of all archaeological sites, including rock art sites, in its concession area by intensive foot surveys and the excavation of chosen representative sites of each archaeological period. The H.U.N.E. concession area comprises four main islands, Us, Sur, Sherari and Shiri and a stretch on the left bank of the Nile from Gebel Musa to the market village of Salamat.
Results of the first two campaigns in the years 2004 and 2005 comprised the discovery of more than 700 archaeological sites and the excavation of a Neolithic settlement site, burials of the Kerma period, and two churches of the Christian era. Apart from rescuing the archaeological sites, H.U.N.E. also took efforts to document the traditions and customs of the local inhabitants of the Dar al-Manasir region, which belong to the Manasir tribe. Their material culture, economic life and poetry are recorded as well.

The Institute of Northeast African Archaeology and Cultural Studies at Humboldt University undertakes substantial financial efforts in order to conduct rescue excavations of several months duration in order to meet the needs of this large-scale project. It is only partly supported by public grants. Therefore, H.U.N.E. offers a sponsorship scheme for archaeological sites to individual persons or institutions.

https://en.wikipedia.org/wiki/H.U.N.E.
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